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The Mavlipa G3 is a "3rd Generation" solution specifically designed to address slurry metrology challenges in semiconductor Chemical Mechanical Planarization (CMP). It is currently the only instrument on the market capable of providing real-time, undiluted measurements of Particle Size Distribution (PSD) and Large Particle Count (LPC) for all types of slurries, including high-concentration opaque solutions like Ceria or Silica. Its compact design and patented optical technology make it a critical monitoring tool for maintaining semiconductor device yield
•No Dilution Required: Measures the natural state of the slurry, avoiding aggregation errors caused by dilution. Enables sample flow to return to the loop to save expensive raw materials
•Multi-Sensor Technology (MSOPS): Features a patented concentration range spanning 9 orders of magnitude, providing industry-leading measurement width and repeatability
•Suppression of Background Scattering: Designed for opaque solutions; bypasses optical turbidity limitations to accurately capture subtle particle changes in the background
•Patented Low/High Flow Operation: Auto-switching optimization to simultaneously capture the slurry "Main Mode" and "LPC portions" of the PSD
•Advanced Gen3 Detection Algorithms: Provides a real-time data stream without the need for additional mathematical modeling or complex calibration
•High Compatibility Materials: All wetted parts are made of Teflon, Sapphire, and Kalrez to ensure chemical stability and prevent metal-ion contamination
• Formulation R&D: Rapid screening of new chemical formulations and their impact on Particle Size Distribution (PSD)
• Incoming Quality Assurance (IQA): Verifying slurry health after shipping, storage, or blending before release to the day tank
• In-line Statistical Process Control (SPC): 24/7 continuous monitoring of delivery systems, surpassing traditional manual batch sampling
• Slurry Loop Monitoring: Continuous monitoring of circulating slurry to identify filter malfunctions or system anomalies in real time
• Point of Use (POU) Detection: The "last chance" to intercept abnormal large particles before the polishing platen, preventing wafer scratching and scrap
•Detection Size Range: 100 nm (min. 80 nm) to > 5 μm
•Max Concentration: Up to 3 x 10⁹ particles/ml